電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)在(zai)(zai)(zai)(zai)(zai)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)場(chang)(chang)的(de)(de)(de)作用(yong)下(xia)(xia)加速(su)(su)飛向基(ji)片(pian)(pian)的(de)(de)(de)過(guo)程中(zhong)與氬(ya)原子(zi)(zi)(zi)(zi)(zi)(zi)發生碰撞，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)離(li)(li)出大(da)(da)量的(de)(de)(de)氬(ya)離(li)(li)子(zi)(zi)(zi)(zi)(zi)(zi)和電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)飛向基(ji)片(pian)(pian)。氬(ya)離(li)(li)子(zi)(zi)(zi)(zi)(zi)(zi)在(zai)(zai)(zai)(zai)(zai)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)場(chang)(chang)的(de)(de)(de)作用(yong)下(xia)(xia)加速(su)(su)轟擊靶(ba)(ba)材(cai)(cai)(cai)，濺(jian)(jian)(jian)射出大(da)(da)量的(de)(de)(de)靶(ba)(ba)材(cai)(cai)(cai)原子(zi)(zi)(zi)(zi)(zi)(zi)，呈中(zhong)性的(de)(de)(de)靶(ba)(ba)原子(zi)(zi)(zi)(zi)(zi)(zi)（或分子(zi)(zi)(zi)(zi)(zi)(zi)）沉(chen)積在(zai)(zai)(zai)(zai)(zai)基(ji)片(pian)(pian)上成膜(mo)(mo)。二次(ci)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)在(zai)(zai)(zai)(zai)(zai)加速(su)(su)飛向基(ji)片(pian)(pian)的(de)(de)(de)過(guo)程中(zhong)受到磁(ci)(ci)(ci)(ci)場(chang)(chang)洛侖磁(ci)(ci)(ci)(ci)力(li)的(de)(de)(de)影響，被束(shu)(shu)縛在(zai)(zai)(zai)(zai)(zai)靠(kao)近靶(ba)(ba)面(mian)的(de)(de)(de)等離(li)(li)子(zi)(zi)(zi)(zi)(zi)(zi)體(ti)區域內(nei)，該區域內(nei)等離(li)(li)子(zi)(zi)(zi)(zi)(zi)(zi)體(ti)密(mi)度很(hen)(hen)高，二次(ci)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)在(zai)(zai)(zai)(zai)(zai)磁(ci)(ci)(ci)(ci)場(chang)(chang)的(de)(de)(de)作用(yong)下(xia)(xia)圍(wei)繞靶(ba)(ba)面(mian)作圓(yuan)周(zhou)(zhou)運(yun)(yun)動(dong)，該電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)的(de)(de)(de)運(yun)(yun)動(dong)路徑(jing)很(hen)(hen)長，在(zai)(zai)(zai)(zai)(zai)運(yun)(yun)動(dong)過(guo)程中(zhong)不(bu)(bu)斷(duan)的(de)(de)(de)與氬(ya)原子(zi)(zi)(zi)(zi)(zi)(zi)發生碰撞電(dian)(dian)(dian)(dian)(dian)(dian)(dian)離(li)(li)出大(da)(da)量的(de)(de)(de)氬(ya)離(li)(li)子(zi)(zi)(zi)(zi)(zi)(zi)轟擊靶(ba)(ba)材(cai)(cai)(cai)，經過(guo)多次(ci)碰撞后電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)的(de)(de)(de)能量逐漸降低(di)，擺脫磁(ci)(ci)(ci)(ci)力(li)線(xian)的(de)(de)(de)束(shu)(shu)縛，遠(yuan)離(li)(li)靶(ba)(ba)材(cai)(cai)(cai)，最終沉(chen)積在(zai)(zai)(zai)(zai)(zai)基(ji)片(pian)(pian)上。 磁(ci)(ci)(ci)(ci)控濺(jian)(jian)(jian)射太陽(yang)膜(mo)(mo)就是(shi)以磁(ci)(ci)(ci)(ci)場(chang)(chang)束(shu)(shu)縛和延長電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)的(de)(de)(de)運(yun)(yun)動(dong)路徑(jing)，改變電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)的(de)(de)(de)運(yun)(yun)動(dong)方(fang)向，提高工作氣體(ti)的(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)離(li)(li)率和有效利用(yong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)的(de)(de)(de)能量。電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)的(de)(de)(de)歸(gui)宿(su)(su)不(bu)(bu)僅僅是(shi)基(ji)片(pian)(pian)，真空(kong)(kong)室內(nei)壁及靶(ba)(ba)源(yuan)陽(yang)極也是(shi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)歸(gui)宿(su)(su)。但一般基(ji)片(pian)(pian)與真空(kong)(kong)室及陽(yang)極在(zai)(zai)(zai)(zai)(zai)同一電(dian)(dian)(dian)(dian)(dian)(dian)(dian)勢。磁(ci)(ci)(ci)(ci)場(chang)(chang)與電(dian)(dian)(dian)(dian)(dian)(dian)(dian)場(chang)(chang)的(de)(de)(de)交互作用(yong)（ E X B drift）使單個(ge)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)(zi)(zi)(zi)(zi)(zi)軌跡(ji)呈三維(wei)螺旋狀(zhuang)，而不(bu)(bu)是(shi)僅僅在(zai)(zai)(zai)(zai)(zai)靶(ba)(ba)面(mian)圓(yuan)周(zhou)(zhou)運(yun)(yun)動(dong)。至于(yu)靶(ba)(ba)面(mian)圓(yuan)周(zhou)(zhou)型的(de)(de)(de)濺(jian)(jian)(jian)射輪廓，那是(shi)靶(ba)(ba)源(yuan)磁(ci)(ci)(ci)(ci)場(chang)(chang)磁(ci)(ci)(ci)(ci)力(li)線(xian)呈圓(yuan)周(zhou)(zhou)形狀(zhuang)形狀(zhuang)。磁(ci)(ci)(ci)(ci)力(li)線(xian)分布方(fang)向不(bu)(bu)同會對成膜(mo)(mo)有很(hen)(hen)大(da)(da)關系。 在(zai)(zai)(zai)(zai)(zai)E X B shift機理(li)下(xia)(xia)工作的(de)(de)(de)不(bu)(bu)光磁(ci)(ci)(ci)(ci)控濺(jian)(jian)(jian)射，多弧鍍靶(ba)(ba)源(yuan)，離(li)(li)子(zi)(zi)(zi)(zi)(zi)(zi)源(yuan)，等離(li)(li)子(zi)(zi)(zi)(zi)(zi)(zi)源(yuan)等都在(zai)(zai)(zai)(zai)(zai)次(ci)原理(li)下(xia)(xia)工作。所不(bu)(bu)同的(de)(de)(de)是(shi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)場(chang)(chang)方(fang)向，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)流大(da)(da)小(xiao)而已。

磁控濺射太(tai)陽膜的(de)(de)基本原理是利用(yong) Ar一02混合氣體(ti)中的(de)(de)等離(li)子體(ti)在電(dian)場(chang)和交變磁場(chang)的(de)(de)作用(yong)下，被加速的(de)(de)高能粒子轟擊靶材(cai)表面(mian)，能量交換后，靶材(cai)表面(mian)的(de)(de)原子脫離(li)原晶格而逸(yi)出，轉(zhuan)移(yi)到基體(ti)表面(mian)而成膜。

磁(ci)控濺射(she)(she)太(tai)陽膜的特(te)點(dian)是成膜速(su)率高，基片(pian)溫度低，膜的粘附性好，可(ke)實現大面(mian)積鍍(du)膜。該技術可(ke)以分為(wei)直(zhi)流(liu)磁(ci)控濺射(she)(she)法(fa)和射(she)(she)頻(pin)磁(ci)控濺射(she)(she)法(fa)。

磁(ci)控(kong)濺(jian)射(she)太陽(yang)(yang)膜(magnetron-sputtering)是(shi)70年代迅速發展起(qi)來(lai)的(de)(de)一種高(gao)速低(di)溫濺(jian)射(she)技(ji)術。磁(ci)控(kong)濺(jian)射(she)太陽(yang)(yang)膜是(shi)在陰極(ji)靶(ba)的(de)(de)表面(mian)上(shang)方形(xing)成(cheng)一個(ge)正(zheng)交(jiao)電(dian)(dian)(dian)(dian)(dian)磁(ci)場。當濺(jian)射(she)產生的(de)(de)二(er)次電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)在陰極(ji)位降區內被(bei)加(jia)速為(wei)高(gao)能電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)后，并(bing)不(bu)直(zhi)接飛向陽(yang)(yang)極(ji)，而(er)是(shi)在正(zheng)交(jiao)電(dian)(dian)(dian)(dian)(dian)磁(ci)場作用下作來(lai)回(hui)振(zhen)蕩的(de)(de)近似(si)擺線的(de)(de)運動。高(gao)能電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)不(bu)斷(duan)與氣體分(fen)子(zi)(zi)發生碰撞并(bing)向后者轉移能量，使(shi)之(zhi)電(dian)(dian)(dian)(dian)(dian)離而(er)本身變成(cheng)低(di)能電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)。這(zhe)些低(di)能電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)最終(zhong)沿(yan)磁(ci)力線漂移到(dao)陰極(ji)附近的(de)(de)輔助(zhu)陽(yang)(yang)極(ji)而(er)被(bei)吸收(shou)，避(bi)免高(gao)能電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)對極(ji)板的(de)(de)強(qiang)烈轟擊，消(xiao)除了二(er)極(ji)濺(jian)射(she)中(zhong)極(ji)板被(bei)轟擊加(jia)熱和被(bei)電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)輻照(zhao)引(yin)起(qi)損傷的(de)(de)根源，體現(xian)磁(ci)控(kong)濺(jian)射(she)中(zhong)極(ji)板低(di)溫的(de)(de)特點。由(you)于外加(jia)磁(ci)場的(de)(de)存在，電(dian)(dian)(dian)(dian)(dian)子(zi)(zi)的(de)(de)復雜運動增(zeng)加(jia)了電(dian)(dian)(dian)(dian)(dian)離率(lv)，實現(xian)了高(gao)速濺(jian)射(she)。磁(ci)控(kong)濺(jian)射(she)的(de)(de)技(ji)術特點是(shi)要(yao)在陰極(ji)靶(ba)面(mian)附件產生與電(dian)(dian)(dian)(dian)(dian)場方向垂直(zhi)的(de)(de)磁(ci)場，一般采用永(yong)久磁(ci)鐵(tie)實現(xian)。

如(ru)果(guo)靶材(cai)(cai)(cai)是磁性(xing)材(cai)(cai)(cai)料，磁力(li)線被靶材(cai)(cai)(cai)屏蔽，磁力(li)線難以穿透(tou)靶材(cai)(cai)(cai)在靶材(cai)(cai)(cai)表面上方(fang)形成磁場，磁控的(de)作用(yong)將大(da)大(da)降低。因此(ci)，濺射磁性(xing)材(cai)(cai)(cai)料時，一(yi)方(fang)面要(yao)求(qiu)磁控靶的(de)磁場要(yao)強一(yi)些(xie)，另一(yi)方(fang)面靶材(cai)(cai)(cai)也要(yao)制備的(de)薄一(yi)些(xie)，以便磁力(li)線能穿過靶材(cai)(cai)(cai)，在靶面上方(fang)產生磁控作用(yong)。

磁(ci)控(kong)濺(jian)射(she)(she)太(tai)陽(yang)膜的(de)設備一(yi)般(ban)(ban)根據所采用(yong)的(de)電源的(de)不同又可(ke)分為直(zhi)流濺(jian)射(she)(she)和(he)射(she)(she)頻(pin)濺(jian)射(she)(she)兩種。直(zhi)流磁(ci)控(kong)濺(jian)射(she)(she)的(de)特點是在(zai)(zai)(zai)陽(yang)極基片和(he)陰極靶(ba)之(zhi)間(jian)加一(yi)個直(zhi)流電壓，陽(yang)離(li)子在(zai)(zai)(zai)電場的(de)作用(yong)下轟擊靶(ba)材(cai)，它的(de)濺(jian)射(she)(she)速率(lv)一(yi)般(ban)(ban)都比較(jiao)大。但是直(zhi)流濺(jian)射(she)(she)一(yi)般(ban)(ban)只(zhi)能用(yong)于(yu)金(jin)屬靶(ba)材(cai)，因為如果是絕緣體靶(ba)材(cai)，則由于(yu)陽(yang)粒子在(zai)(zai)(zai)靶(ba)表(biao)面積累，造成所謂的(de)靶(ba)中毒，濺(jian)射(she)(she)率(lv)越(yue)(yue)來越(yue)(yue)低(di)。

磁(ci)控濺射太陽膜(mo)(mo)(mo)是目前(qian)車膜(mo)(mo)(mo)制造中的(de)尖端技術(shu)，與早期或現在一(yi)些劣(lie)質(zhi)車膜(mo)(mo)(mo)生產商仍在采用的(de)染色與鍍(du)鋁復(fu)合(he)方式來生產窗膜(mo)(mo)(mo)的(de)工藝有著本(ben)質(zhi)的(de)不同。過(guo)去，一(yi)些車膜(mo)(mo)(mo)出現膜(mo)(mo)(mo)紙四周與車玻(bo)(bo)璃分離、車膜(mo)(mo)(mo)小(xiao)于玻(bo)(bo)璃面積四周露(lu)白邊(bian)和車膜(mo)(mo)(mo)有氣泡等，都責怪是操作工安裝(zhuang)水平問(wen)題(ti)，實際(ji)上(shang)是膜(mo)(mo)(mo)的(de)質(zhi)量不過(guo)關造成(cheng)的(de)問(wen)題(ti)。

傳統的(de)車膜生(sheng)(sheng)產方(fang)式是染色與(yu)鍍(du)鋁(lv)復合方(fang)式。染色大家都(dou)明(ming)白，不必(bi)多述。鍍(du)鋁(lv)方(fang)式就是制(zhi)作(zuo)鏡子的(de)方(fang)式，既把一些熔點(dian)低的(de)金屬物溶化之后，通過熱(re)蒸發(fa)涂(tu)布在某種(zhong)聚脂(zhi)膜上。這種(zhong)工(gong)藝成(cheng)本低，但最(zui)大的(de)問(wen)題(ti)是顏料與(yu)鋁(lv)層(ceng)對光線的(de)相互干涉而(er)產生(sheng)(sheng)大量散失(shi)光線，容易造成(cheng)司機視覺(jue)疲勞(lao)，導致司機頭暈目眩、視覺(jue)模糊而(er)引發(fa)駕車安(an)全性下(xia)降等(deng)諸多問(wen)題(ti)。而(er)磁控濺射則不同，它(ta)是采用特殊(shu)專利濺射工(gong)藝把十二層(ceng)納米材(cai)料一次合成(cheng)到最(zui)精細(xi)光學聚脂(zhi)膜上的(de)工(gong)藝。

用(yong)專業術語解(jie)釋很難懂，咱們打個(ge)比方(fang)吧。一(yi)般人(ren)都(dou)有(you)過這樣(yang)的(de)(de)經(jing)歷：下(xia)雨天走在(zai)一(yi)個(ge)活動的(de)(de)石板上(shang)(shang)，石板下(xia)面(mian)(mian)有(you)泥漿(jiang)，人(ren)腳(jiao)踩上(shang)(shang)去(qu)后，泥漿(jiang)會突然(ran)從石板底下(xia)向四周飛濺(jian)。磁控濺(jian)射(she)也是運(yun)用(yong)的(de)(de)這個(ge)原理(li)。從上(shang)(shang)圖左下(xia)角那(nei)個(ge)小圖可(ke)以(yi)看出，下(xia)面(mian)(mian)是濺(jian)射(she)層，中間是一(yi)個(ge)真空空間，最(zui)上(shang)(shang)面(mian)(mian)是聚脂膜(mo)(mo)，膜(mo)(mo)的(de)(de)上(shang)(shang)端有(you)磁控。這樣(yang)，當高速電子(zi)對不銹鋼、鈦、鎳、金、銀、銅等貴稀金屬轟擊后，金屬分(fen)子(zi)將向上(shang)(shang)面(mian)(mian)的(de)(de)聚脂膜(mo)(mo)濺(jian)射(she)，再通過聚脂膜(mo)(mo)上(shang)(shang)面(mian)(mian)磁的(de)(de)作用(yong)，使(shi)被濺(jian)射(she)的(de)(de)金屬物均勻分(fen)布。所(suo)以(yi)，運(yun)用(yong)這種(zhong)(zhong)工藝，解(jie)決了染色(se)(se)－熱(re)(re)蒸發(fa)工藝生(sheng)產的(de)(de)窗(chuang)膜(mo)(mo)透光低、高反光、隔(ge)熱(re)(re)功能(neng)差、視(shi)覺模糊、易褪色(se)(se)、耐腐蝕性差等諸(zhu)多缺(que)陷(xian)，不僅可(ke)以(yi)制作各種(zhong)(zhong)純(chun)金屬化窗(chuang)膜(mo)(mo)，而(er)且因為沒有(you)添加任何顏料，所(suo)以(yi)它(ta)(ta)可(ke)以(yi)杜絕偏色(se)(se)、變(bian)色(se)(se)，做(zuo)到永不褪色(se)(se)，保(bao)證純(chun)正的(de)(de)中性色(se)(se)，與任何車(che)輛的(de)(de)顏色(se)(se)都(dou)能(neng)完(wan)美(mei)匹配，并(bing)保(bao)證不分(fen)層、不剝(bo)落與開裂。更重(zhong)要的(de)(de)是，它(ta)(ta)在(zai)不同的(de)(de)光照度下(xia)，視(shi)覺顏色(se)(se)恒定(ding)不變(bian)，可(ke)以(yi)保(bao)證車(che)內人(ren)員的(de)(de)視(shi)線清(qing)晰。